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US 7,019,325 B2Granted
Broadband light emitting device
AssigneeExalos AG
InventorsLianhe Li, Andrea Fiore, Lorenzo Occhi, Christian Velez
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AssigneeExalos AG
InventorsLianhe Li, Andrea Fiore, Lorenzo Occhi, Christian Velez
Estimating the term…
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
An electroluminescent light emitting device comprising a semiconductor heterostructure forming a PN junction,
An electroluminescent light emitting device comprising a semiconductor heterostructure, the semiconductor heterostructure including, on a substrate, a first cladding layer and a second cladding layer and a light emission arrangement arranged between the first and the second cladding layers, said light emission arrangement emitting electromagnetic radiation into an optical beam path upon injection of a current, the light emission arrangement including a layer stack comprising a plurality of quantum dot layers, each quantum dot layer sandwiched by a barrier layer and a capping layer, at least two of said capping layers being made of differing materials.
A non-lasing superluminescent light emitting diode comprising a semiconductor heterostructure, the semiconductor heterostructure including, on a substrate, a first cladding layer and a second cladding layer and a light emission arrangement arranged between the first and the second cladding layers, said light emission arrangement emitting, upon injection of a current, electromagnetic radiation into a waveguide formed by said heterostrucutre, the light emission arrangement including a layer stack comprising a plurality of quantum dot layers, each quantum dot layer sandwiched by a barrier layer and a capping layer, at least two of said capping layers being made of differing materials or having a different thickness.
Dependencies are inferred from the claim text.