Light emitting device
AssigneeSony Semiconductor Solutions Corporation
InventorTakahiro Arakida
Life of this patent
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Abstract
A light emitting device according to an embodiment of the present disclosure includes: a substrate; a first contact layer; a buffer layer in which at least any of a carrier concentration, a material composition, and a composition ratio is different from that of the first contact layer; and a semiconductor stacked body. The substrate has a first surface and a second surface that are opposed to each other. The first contact layer is stacked on the first surface of the substrate. The buffer layer is stacked on the first contact layer. The semiconductor stacked body is stacked above the first surface of the substrate with the first contact layer and the buffer layer interposed in between. The semiconductor stacked body has a light emitting region configured to emit laser light.
Claims20
A light emitting device comprising:
- a substrate having a first surface and a second surface that are opposed to each other;
- a first contact layer that is stacked directly on the first surface of the substrate;
- a buffer layer with a thickness of between 100 nanometers (nm) and 1000 nm in which a carrier concentration is different from that of the first contact layer, the buffer layer being stacked on the first contact layer;
- and
- a semiconductor stacked body that is stacked above the first surface of the substrate with the first contact layer and the buffer layer interposed in between, the semiconductor stacked body having a light emitting region configured to emit laser light,
- wherein the buffer layer includes at least any of a GaAs layer, an AlAs layer, an AlGaAs layer, an InGaAs layer, an AlGaInAs layer, a GaInP layer, and a AlGaInP layer and has a single layer structure or a stacked structure.
A light emitting device comprising:
- a substrate having a first surface and a second surface that are opposed to each other;
- a first contact layer that is stacked directly on the first surface of the substrate;
- a buffer layer with a thickness of between 100 nanometers (nm) and 1000 nm in which a carrier concentration is different from that of the first contact layer, the buffer layer being stacked on the first contact layer;
- and
- a semiconductor stacked body that is stacked above the first surface of the substrate with the first contact layer and the buffer layer interposed in between, the semiconductor stacked body having a light emitting region configured to emit laser light,
- wherein the light emitting region is configured to emit infrared laser light.
Dependencies are inferred from the claim text.