H01S 5/3421
Layer structure of quantum wells to influence the near/far field
Official title: {layer structure of quantum wells to influence the near/far field}
H01S5/3421 (Layer structure of quantum wells to influence the near/far field) appears on 20 US grants and 6 published applications in this corpus.
Search patents in H01S- Granted patents
- 20
- Published applications
- 6
- Assignees
- 15
- Inventors
- 38
- Latest grant
- 2 Jul 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 2 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
By publication year. Applications have been published since 2001.
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Most cited
By later US patents
- High-power semiconductor laser diode25US 5,272,711 ATRW Inc. · 1993
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- Narrow beam divergence laser diode15US 5,260,959 AEastman Kodak Company · 1993