Semiconductor laser element

A method of producing a semiconductor laser element comprising:

• a step of growing a lower cladding layer, an active layer, a left upper cladding layer, a etching stopper layer having a multiple quantum well structure, an upper cladding layer and a contact layer in the order on a semiconductor substrate to form a laminate structure;
• a step of doping an impurity end portions near to edge surfaces of the laminate structure so as to cross over the active layer to form window regions and to make the etching stopper layer of window regions into disorder;
• a step of etching the contact layer in the window regions;
• a step of forming a protective film to form a ridge;
• a step of etching both sides of the protective film with the protective film so as to cross over the disordered etching stopper layer.

A method of producing a semiconductor laser element comprising:

• a step of growing a lower cladding layer, an active layer, a first left upper cladding layer, an upper cladding layer and a contact layer in the order on a semiconductor substrate to form a laminate structure;
• a step of doping an impurity end portions near to edge surfaces of the laminate structure so as to cross over the active layer to form window regions;
• a step of forming a protective film to form a ridge;
• a step of etching both sides of the protective film with the protective film up to the first left upper cladding layer;
• a step of forming a selectively growth mask on the window regions;
• a step of selectively growing a second left upper cladding layer on the first left upper cladding layer.