Light-emitting device and fabricating method thereof
AssigneeSharp Kabushiki Kaisha
InventorsMitsuhiro Matsumoto, Masaki Tatsumi
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Abstract
A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer.
Claims24
A light-emitting device, comprising:
- a first doped guide layer including Al;
- a second doped guide layer including Al;
- and
- an active layer interposed between the first doped guide layer and the second doped guide layer, the active layer having a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers, wherein the quantum barrier layer includes Al,
- wherein the first doped guide layer and the second doped guide layer are disposed to be adjacent to the quantum well layers,
- the first doped guide layer and the second doped guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers,
- the forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer, and
- the Al composition ratio of the first and second guide layers is smaller than the Al composition ratio of the quantum barrier layer.
A light-emitting device of a semiconductor laser element formed as a layered structure of a plurality of layers, comprising:
- a substrate;
- a buffered layer disposed on the substrate;
- a cladding layer disposed on the buffer layer;
- a doped optical guide layer disposed on the cladding layer;
- an active layer disposed on the doped optical guide layer;
- a cap layer disposed on the cladding layer;
- an n-type electrode provided on the surface of the substrate;
- and
- a p-type electrode disposed on the cap layer;
- wherein one or more of particular layers in the layered structure includes an impurity-scarce region and an impurity-doped region within each layer of the one or more particular layers, and the impurity-scarce region is disposed closer to the active layer than the impurity-doped region.
Dependencies are inferred from the claim text.