H01S 5/3408
Characterised by specially shaped wells
Official title: {characterised by specially shaped wells, e.g. triangular}
H01S5/3408 (Characterised by specially shaped wells) appears on 108 US grants and 85 published applications in this corpus.
Search patents in H01S- Granted patents
- 108
- Published applications
- 85
- Assignees
- 50
- Inventors
- 181
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 4 |
| 2004 | 0 | 2 |
| 2005 | 2 | 25 |
| 2006 | 21 | 6 |
| 2007 | 6 | 9 |
| 2008 | 6 | 2 |
| 2009 | 9 | 3 |
| 2010 | 4 | 1 |
| 2011 | 2 | 2 |
| 2012 | 4 | 0 |
| 2013 | 2 | 1 |
| 2014 | 0 | 0 |
| 2015 | 3 | 2 |
| 2016 | 2 | 1 |
| 2017 | 2 | 4 |
| 2018 | 3 | 4 |
| 2019 | 4 | 5 |
| 2020 | 3 | 2 |
| 2021 | 2 | 3 |
| 2022 | 0 | 2 |
| 2023 | 0 | 1 |
| 2024 | 1 | 3 |
| 2025 | 2 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Laser source and method for forming the same4 Nov 2025US 12,463,401 B2Nanyang Technological University
- Stable UV laser18 Mar 2025US 12,255,432 B2Pavilion Integration Corporation
- Surface emitting laser device and light emitting device including the same20 Aug 2024US 12,068,583 B2Suzhou Lekin Semiconductor Co., Ltd.
- Semiconductor light source2 Nov 2021US 11,165,223 B2OSRAM OLED GmbH
- Quantum well placement in a tunable VCSEL5 Oct 2021US 11,139,635 B2Excelitas Technologies Corp.
- Zinc oxide-based quantum cascade laser element15 Jan 2026US 2026/0018865 A1
- Stable UV Laser31 Jul 2025US 2025/0246870 A1Pavilion Integration Corporation
- Light-emitters with group iii-nitride-based quantum well active regions having gan interlayers28 Nov 2024US 2024/0395966 A1
- Semiconductor laser diode array and the method for manufacturing a two-dimensional semiconductor laser diode array30 May 2024US 2024/0178638 A1Instytut Wysokich Cisnien Polskiej Akademii Nauk
- Multiple quantum well band structures for light emitting devices11 Jan 2024US 2024/0014345 A1
Most cited
By later US patents
- Optical semiconductor device with diffraction grating structure249US 5,926,493 ASDL, Inc. · 1999
- Bipolar transistor with monoatomic base layer between emitter and collector layers105US 5,373,186 AMAX-PLANCK-GESELLSCHAFT zur FOERDERUNG der WISSENSCHAFTEN.e.V · 1994
- Optical semiconductor device comprising a multiple quantum well structure102US 6,849,881 B1OSRAM GmbH · 2005
- Semiconductor devices with at least one monoatomic layer of doping atoms92US 4,882,609 AMax-Planck-Gesellschaft zur Forderung der Wissenschafter e.V. · 1989
- Transmitter photonic integrated circuit (TxPIC) chips78US 7,885,492 B2Infinera Corporation · 2011