Surface emitting laser device and light emitting device including the same

A surface emitting laser device comprising:

• a first reflective layer;
• an active layer disposed on the first reflective layer;
• an aperture region disposed on the active layer and including an aperture and an insulating region;
• and
• a second reflective layer disposed on the aperture region,
• wherein the active layer includes a plurality of quantum wells interleaved with a plurality of quantum barriers, and an intermediate layer disposed between each quantum well-quantum barrier pair of the plurality of quantum wells and quantum barriers,
• wherein the quantum wells and the quantum barriers are composed of a ternary material respectively,
• wherein the intermediate layer is composed of a binary material, and
• wherein the second reflective layer comprises:
• a first AlGaAs-based layer including Alx1Ga(1-x1)As (where 0<X1<0.2);
• a second AlGaAs-based layer disposed on the first AlGaAs-based layer and including Alx2Ga(1-x2)As (where, 0.8<X2<1.0);
• and
• an AlGaAs-based transition region disposed between the first AlGaAs-based layer and the second AlGaAs-based layer.