Optical semiconductor device comprising a multiple quantum well structure

An optical semiconductor device with a multiple quantum well structure, comprising:

• at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice wherein within at least one well layer of the superlattice, the In content increases in a direction of growth.

An optical semiconductor device with a multiple quantum well structure, comprising:

• at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein at least one of the well layers of the superlattice has at least one pair of single layers of which a first of the at least one pair, in a direction of growth, has a lower indium content than a second of the at least one pair in a direction of growth.

An optical semiconductor device with a multiple quantum well structure, comprising:

• at least one combination of alternative well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminium-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein within a, least one well layer of the superlattice, the In content increases in a direction of growth.

An optical semiconductor device with a multiple quantum well structure, comprising:

• at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminum-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein at least one of the well layers of the super-lattice has at least one pair of single layers of which a first of the pair, in a direction of growth, has a lower indium content than a second of the pair in a direction of growth.