Bipolar transistor with monoatomic base layer between emitter and collector layers
AssigneeMax-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
InventorsErdmann Schubert, Klaus Ploog, Albrecht Fischer
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Abstract
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type layer 38 is directly between n-type collector and emitter layers (32, 33). The bipolar transistor described herein has an extremely low base width and is capable of operating at high frequencies.
Claims1
An epitaxial semiconductor device in the form of a bipolar transistor (30) comprising in sequence a first layer of a highly doped n-type substrate (31), a second layer of n-type material (32), a Dirac-delta doped monoatomic layer of acceptors (35), a third layer of highly doped n-type material (33), and a fourth layer of very highly doped n-type material;
- and wherein the collector contact (36) is formed on at least one of said first and second layers (31, 32), the base contact (38) on said Dirac-delta doped monoatomic layer (35) and the emitter contact (37) on said fourth layer.
Dependencies are inferred from the claim text.