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US 12,255,432 B2Granted
Stable UV laser
AssigneePavilion Integration Corporation
InventorsNingyi Luo, Jihchuang Huang
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Abstract
UV laser devices, systems, and methods are shown and/or described herein. Included are a method, device or system for VECSEL and MECSEL lasers including both barrier-pumped and in-well pumped lasers. Also disclosed is a method of manufacturing gain chips for use in the lasers, arrangements of lasers, and selection of proper non-linear crystal (NLC) for use in the device.
Claims20
A UV laser comprising:
- a gain chip having one or more quantum wells or one or more quantum dots and as a semiconductor gain media for the laser, wherein:
- the gain chip has one or more semiconductor thin disc laser cavities, the semiconductor thin disc laser cavity being a MECSEL cavity,
- the one or more quantum wells or one or more quantum dots are enclosed inside the one or more thin disc laser cavities,
- the gain chip comprises an optically bonded heat spreader as a first layer thereof, the heat spreader being a cooling material or composition selected from SiC, GaAs or a high-thermal conducting optic material having a coefficient of thermal expansion similar to that of the semiconductor gain media;
- at least two mirrors, wherein at least one of the at least two mirrors is highly reflective and at least one of the at least two mirrors is partially reflective, and wherein the at least two mirrors are disposed to extract UV light from the one or more thin disc laser cavities;
- a Visible Wavelength Laser Light Source, VWLS, wherein the one or more thin disc laser cavities support multiple frequencies of VWLS;
- and
- length optimized non-linear optics to double the visible frequencies inside the one or more thin disc laser cavities into UV light,
- wherein the UV laser is a MECSEL with a MECSEL setup with the at least two mirrors being operatively disposed disparately relative to the gain chip.
6 more elements
A UV laser comprising:
- a gain chip having one or more quantum wells or one or more quantum dots and
- one or more mirrors;
- and,
- further including one or more of:
- the one or more mirrors being highly reflective;
- the one or more quantum wells being semiconductor gain media for the laser;
- the gain chip having one or more laser cavities, and the one or more quantum wells being enclosed inside the one or more laser cavities;
- the gain chip having one or more semiconductor thin disc laser cavities, and particularly a VECSEL cavity or a MECSEL cavity;
- or
- the one or more mirrors being disposed to extract light from the one or more cavities;
- the UV laser further comprising one or more of:
- a MECSEL including
- a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle ΘB or the polarization angle relative to the optical path;
- a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle ΘB or the polarization angle relative to the optical path to eliminate an AR coating on the MECSEL's gain chip for Visible Wavelength Laser Light Source;
- a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle ΘB or the polarization angle relative to the optical path, the Brewster angle reducing optical loss due to imperfect coating on the gain chip.
12 more elements
Dependencies are inferred from the claim text.