Semiconductor laser diode array and the method for manufacturing a two-dimensional semiconductor laser diode array

A method for manufacturing a two-dimensional laser diode array comprising preparing:

• a) a structured gallium nitride bulk substrate,
• b) a lower cladding layer with n-type electrical conductivity,
• c) a lower light guide layer with n-type electrical conductivity,
• d) a light-emitting layer,
• e) an electron blocking layer with p-type electrical conductivity,
• f) an upper light guide layer,
• g) an upper cladding layer with p-type electrical conductivity,
• h) a subcontact layer with p-type electrical conductivity,
• with etched ridges defining the laser waveguides and etched mirrors constituting the resonant cavity, wherein the method comprises, in step (a), forming light beam deflectors (15) in the bulk GaN substrate (1) with a thickness of at least 200 μm, by applying a positive photoresist layer (18), irradiating with a spatially variable dose of light, developing and then dry etching of the applied layer in order to obtain the light beam deflectors (15), wherein the light beam deflectors (15) comprise two planes, namely a parallel deflector plane (17) in relation to the GaN substrate (1) and an oblique deflector plane (15a) tilted at an angle in range of 40°-50° in relation to the surface of the GaN substrate (1), wherein dry etching is performed before epitaxy of the lower cladding layer (2) with n-type electrical conductivity, and the parallel deflector plane (17) is located higher than the subcontact layer (8) applied in step (h) by at least 0.5 μm.