Quantum well placement in a tunable VCSEL
AssigneeExcelitas Technologies Corp.
InventorsBartley C. Johnson, Mark E. Kuznetsov, Walid A. Atia, Peter S. Whitney
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Abstract
Quantum well designs for tunable VCSELs are disclosed that are tolerant of the wavelength shift. Specifically, the active region has even number of substantially uniformly spaced (¼ of the center wavelength in the semiconducting material) quantum wells.
Claims18
A tunable vertical cavity surface emitting laser (VCSEL) with an active region with at least one pair of quantum wells, wherein the quantum wells in each pair of the quantum wells are spaced from each other by a ¼ of a center wavelength of a tuning range of the VCSEL in a semiconducting material of the active region.
A tunable vertical cavity surface emitting laser (VCSEL) with an active region with at least two pairs of quantum wells, wherein at a center wavelength of a tuning range, quantum wells of the active regions are located on either side of an antinode of a standing wave inside the VCSEL, wherein a distance between a last quantum well of the active region is spaced from a beginning of a semiconductor distributed Bragg reflector by less than twice a distance between the quantum wells, wherein a spacing between the quantum wells of each pair is ¼ of the center wavelength in a semiconducting material of the active region.
Dependencies are inferred from the claim text.