H01S 5/3426
In aivbvi compounds
Official title: {in AIVBVI compounds, e.g. PbSSe-laser}
H01S5/3426 (In aivbvi compounds) appears on 8 US grants and 3 published applications in this corpus.
Search patents in H01S- Granted patents
- 8
- Published applications
- 3
- Assignees
- 9
- Inventors
- 27
- Latest grant
- 1 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 2 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter1 Jul 2025US 12,344,783 B2Fundació Institut De CièNcies FotòNiques
- SiGeSn laser diodes and method of fabricating same12 Sep 2023US 11,757,257 B2Board of Trustees of the University of Arkansas
- Optical microcavity emitter arrangements and methods therefor17 Aug 2010US 7,778,296 B1The Board of Trustees of the Leland Stanford Junior University
- Silicon light-emitting device and method for the production thereof27 May 2003US 6,570,187 B1Commissariat A L' Energie Atomique
- Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity20 Sep 1994US 5,349,596 ACommissariat A L' Energie Atomique
- Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter28 Jul 2022US 2022/0235263 A1Fundació Institut De CièNcies FotòNiques
- Sigesn laser diodes and method of fabricating same31 Mar 2022US 2022/0102942 A1Board of Trustees of the University of Arkansas
- Surface emitting semiconductor laser and method of manufacture thereof28 Mar 2013US 2013/0077648 A1Eth Zurich, Eth Transfer
Most cited
By later US patents
- Optical microcavity emitter arrangements and methods therefor17US 7,778,296 B1The Board of Trustees of the Leland Stanford Junior University · 2010
- Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity13US 5,349,596 ACommissariat A L' Energie Atomique · 1994
- Lead-europium selenide-telluride heterojunction semiconductor laser9US 4,608,694 AGeneral Motors Corporation · 1986
- Lead-alloy-telluride heterojunction semiconductor laser8US 4,612,644 AGeneral Motors Corporation · 1986
- Silicon light-emitting device and method for the production thereof8US 6,570,187 B1Commissariat A L' Energie Atomique · 2003