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US 11,757,257 B2Granted
SiGeSn laser diodes and method of fabricating same
AssigneeBoard of Trustees of the University of Arkansas
InventorsShui-Qing Yu, Yiyin Zhou, Wei Du
Life of this patent
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Abstract
A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.
Claims28
A laser diode, comprising:
- a double heterostructure (DHS) comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer, wherein the top layer and the buffer layer have opposite types of conductivity, and wherein the active layer has a bandgap smaller than that of the buffer layer or the top layer,
- wherein the top layer is formed of a SiGeSn material, and the top layer is doped as a p-type.
A method of forming a laser diode, comprising:
- growing a laser diode structure via a chemical vapor deposition reactor using precursors of SiH4 (or Si3H8), GeH4 (or Ge2H6), and/or SnCl4 (or SnD4) on a substrate,
- wherein the laser diode structure comprises a double heterostructure (DHS) comprising a buffer layer grown on the substrate, an intrinsic active layer frown on the buffer layer, and a top layer grown in the buffer layer, wherein the top layer and the buffer layer are doped to have opposite types of conductivity, and wherein the active layer has a bandgap smaller than that of the buffer layer or the top layer,
- wherein the top layer is formed of a SiGeSn material, and the top layer is doped as a p-type.
Dependencies are inferred from the claim text.