H01S 5/342
Containing short period superlattices [sps]
Official title: {containing short period superlattices [SPS]}
H01S5/342 (Containing short period superlattices [sps]) appears on 29 US grants and 13 published applications in this corpus.
Search patents in H01S- Granted patents
- 29
- Published applications
- 13
- Assignees
- 23
- Inventors
- 61
- Latest grant
- 24 May 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 2 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 4 | 4 |
| 2015 | 3 | 1 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Staggered composition quantum well method and device24 May 2016US 9,349,910 B2Lehigh University
- Device with transparent and higher conductive regions in lateral cross section of semiconductor layer26 May 2015US 9,042,420 B2Sensor Electronic Technology, Inc.
- Submount, submount assembly, and submount assembling method17 Mar 2015US 8,982,920 B2Sony Corporation
- Structure for electron-beam pumped edge-emitting device and methods for producing same24 Feb 2015US 8,964,796 B2Palo Alto Research Center Incorporated
- Emitting device with compositional and doping inhomogeneities in semiconductor layers4 Nov 2014US 8,879,598 B2Sensor Electronic Technology, Inc.
- Quantum well structure, chip processing method, chip, and laser16 Nov 2023US 2023/0369829 A1Phograin Technology (Shenzhen) Co., Ltd.
- Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer19 Feb 2015US 2015/0048309 A1Sensor Electronic Technology, Inc.
- Structure For Electron-Beam Pumped Edge-Emitting Device and Methods for Producing Same18 Dec 2014US 2014/0369367 A1Palo Alto Research Center Incorporated
- Staggered composition quantum well method and device10 Jul 2014US 2014/0191189 A1Lehigh University
- Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers12 Jun 2014US 2014/0158980 A1Sensor Electronic Technology, Inc.
Most cited
By later US patents
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995
- Silicon-based strain-symmetrized GE-SI quantum lasers135US 6,154,475 AThe United States of America as represented by the Secretary of the Air Force · 2000
- Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy74US 4,261,771 ABell Telephone Laboratories, Incorporated · 1981
- Extended wavelength strained layer lasers having strain compensated layers53US 5,825,796 APicolight Incorporated · 1998
- Extended wavelength strained layer lasers having nitrogen disposed therein52US 5,719,894 APicolight Incorporated · 1998