Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
Life of this patent
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Abstract
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
Claims23
A device comprising:
- a short period superlattice (SPSL) semiconductor layer, wherein a composition of at least one barrier in the SPSL semiconductor layer varies along lateral dimensions of the at least one barrier such that a lateral cross section of the at least one barrier includes:
- a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the at least one barrier;
- and
- a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the at least one barrier, and wherein lateral inhomogeneities in at least one of:
- the composition or a doping of the at least one barrier forms the set of transparent regions and the set of higher conductive regions.
An emitting device comprising:
- an active region configured to generate electromagnetic radiation having a target wavelength;
- and
- a short period superlattice (SPSL) semiconductor layer, wherein a composition of a plurality of barriers in the SPSL semiconductor layer varies along lateral dimensions of each of the plurality of barriers such that a lateral cross section of each barrier includes:
- a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the barrier and have an average transmission coefficient for radiation of the target wavelength of at least fifty percent;
- and
- a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the barrier, and wherein the set of higher conductive regions have an average resistance per unit area to vertical current flow smaller than approximately 10−2 ohm·cm2.
An emitting device comprising:
- an active region configured to generate electromagnetic radiation having a target wavelength;
- and
- a short period superlattice (SPSL) semiconductor layer, wherein a composition of a plurality of barriers in the SPSL semiconductor layer varies along lateral dimensions of each of the plurality of barriers such that a lateral cross section of each barrier includes:
- a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the barrier and have an average transmission coefficient for radiation of the target wavelength of at least fifty percent;
- and
- a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the barrier, and wherein the set of higher conductive regions have an average resistance per unit area to vertical current flow smaller than approximately 10−2 ohm·cm2, wherein the active region and the SPSL semiconductor layer are formed of group III-V materials.
Dependencies are inferred from the claim text.