Staggered composition quantum well method and device

A method for improving radiative light efficiency of a light emitting device, comprising:

• providing a semiconductor substrate;
• and
• forming on the substrate, a succession of layers to provide a staggered composition quantum well surrounded by barrier layers, the staggered composition quantum well comprising:
• a plurality of active layers of InGaN in abutting relationship adjacent one another between said barrier layers, each of said barrier layer abutting a respective one of said plurality of active layers of InGaN, each of said plurality of active layers having a band gap characteristic distinctly different from a respective band gap characteristic of each abutting active layer, said plurality of active layers collectively having a plurality of distinctly different band gap characteristics that collectively provide a non-uniform material composition having an abrupt step function-like transition in band gap characteristics across said plurality of active layers within said quantum well active region.

A light emitting device comprising:

• a type I quantum well comprising:
• a pair of barrier layers, each of said pair of barrier layers having a large band gap characteristic causing said pair of barrier layers to function as barrier layers within the quantum well;
• and
• a quantum well active region sandwiched between said pair of barrier layers, said quantum well active region comprising:
• a plurality of active layers of InGaN in abutting relationship adjacent one another between said pair of large barrier layers, each of said plurality of active layers having a band gap characteristic distinctly different from a respective band gap characteristic of each abutting active layer, said plurality of active layers collectively having a plurality of distinctly different band gap characteristics that collectively provide a non-uniform material composition having an abrupt step function-like transition in band gap characteristics across said plurality of active layers within said quantum well active region.