Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer

An emitting device comprising:

• an active region configured to generate electromagnetic radiation having a target wavelength;
• and
• a short period superlattice (SPSL) semiconductor layer, wherein a composition of a plurality of barriers in the SPSL semiconductor layer varies along lateral dimensions of each of the plurality of barriers such that a lateral cross section of each barrier includes:
• a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the barrier and have an average transmission coefficient for radiation of the target wavelength of at least fifty percent;
• and
• a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the barrier, and wherein the set of higher conductive regions have an average resistance per unit area to vertical current flow smaller than approximately 10−2 ohm·cm2.

An emitting device comprising:

• an active region configured to generate electromagnetic radiation having a target wavelength;
• and
• a short period superlattice (SPSL) semiconductor layer, wherein a composition of a plurality of barriers in the SPSL semiconductor layer varies along lateral dimensions of each of the plurality of barriers such that a lateral cross section of each barrier includes:
• a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the barrier and have an average transmission coefficient for radiation of the target wavelength of at least fifty percent;
• and
• a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the barrier, and wherein the set of higher conductive regions have an average resistance per unit area to vertical current flow smaller than approximately 10−2 ohm·cm2, wherein the active region and the SPSL semiconductor layer are formed of group III-V materials.