H01S 5/3425
Comprising couples wells or superlattices
Official title: {comprising couples wells or superlattices}
H01S5/3425 (Comprising couples wells or superlattices) appears on 73 US grants and 65 published applications in this corpus.
Search patents in H01S- Granted patents
- 73
- Published applications
- 65
- Assignees
- 61
- Inventors
- 190
- Latest grant
- 15 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 0 |
| 2003 | 4 | 8 |
| 2004 | 5 | 8 |
| 2005 | 3 | 6 |
| 2006 | 4 | 1 |
| 2007 | 4 | 3 |
| 2008 | 0 | 0 |
| 2009 | 1 | 2 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 5 |
| 2014 | 3 | 2 |
| 2015 | 4 | 4 |
| 2016 | 2 | 1 |
| 2017 | 1 | 1 |
| 2018 | 0 | 1 |
| 2019 | 0 | 4 |
| 2020 | 4 | 1 |
| 2021 | 1 | 3 |
| 2022 | 1 | 3 |
| 2023 | 3 | 6 |
| 2024 | 2 | 1 |
| 2025 | 4 | 3 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Epitaxial oxide materials, structures, and devices11 Feb 2025US 12,224,378 B2Silanna UV Technologies Pte Ltd
- Semiconductor device4 Feb 2025US 12,218,272 B2Nippon Telegraph and Telephone Corporation
- Light emitting apparatus and projector14 Jan 2025US 12,199,408 B2Seiko Epson Corporation
- Surface emitting laser device and light emitting device including the same20 Aug 2024US 12,068,583 B2Suzhou Lekin Semiconductor Co., Ltd.
- Zinc oxide-based quantum cascade laser element15 Jan 2026US 2026/0018865 A1
- Epitaxial oxide materials, structures, and devices28 Aug 2025US 2025/0275302 A1Silanna UV Technologies Pte Ltd
- A device for emitting light and a method for producing a light-emitting device15 May 2025US 2025/0160056 A1Epinovatech AB
- Iii-nitride-based high efficiency and high-power devices grown on or above a strain relaxed template24 Apr 2025US 2025/0133866 A1The Regents of the University of California
- Semiconductor laser device and method of manufacturing the same1 Feb 2024US 2024/0039248 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Group-III nitride semiconductor light-emitting device110US 6,153,894 AShowa Denko K. K. · 2000
- Light emitting devices based on interband transitions in type-II quantum well heterostructures56US 5,588,015 AUniversity of Houston · 1996
- Gated resonant tunneling device and fabricating method thereof54US 5,962,864 AKabushiki Kaisha Toshiba · 1999
- Coupled quantum well tunable laser44US 5,287,377 AInternational Business Machines Corporation · 1994
- Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same39US 5,068,867 AHughes Aircraft Company · 1991