Gated resonant tunneling device and fabricating method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsMark L. Leadbeater, Nalin K. Patel
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Abstract
A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the first terminal. The first terminal is patterned into a section and a plurality of layers comprising the mutually separated first and second barrier layers are formed on top of the first terminal. A second terminal is then formed on top of the plurality of semiconductor layers. The second terminal is then patterned so that it only overlies the first terminal in confined region. A front-gate is then formed on top of the patterned second terminal.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- first to third barrier layers;
- first and second quantum wells;
- a first terminal;
- and
- a front-gate;
- wherein the first barrier layer is provided overlying the first terminal, the second quantum well is provided overlying the first barrier layer, the third barrier layer is provided overlying the second quantum well, the first quantum well is provided overlying the third barrier layer, the second barrier layer is provided overlying the first quantum well, the front-gate is provided overlying the second barrier layer, and
- the first terminal is a patterned collector and the first quantum well is a patterned emitter wherein the patterned emitter only overlies the patterned collector in a predefined region so that the first barrier layer is only interspersed between the patterned emitter and the patterned collector in a predetermined conduction region.
Dependencies are inferred from the claim text.