Epitaxial oxide materials, structures, and devices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
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Abstract
In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.
Claims42
A semiconductor structure comprising:
- a substrate comprising a first in-plane lattice constant;
- and
- a graded layer on the substrate, comprising a first epitaxial oxide material,
- wherein the first epitaxial oxide material comprises a composition that varies in a growth direction such that the graded layer has the first in-plane lattice constant adjacent to the substrate and a second in-plane lattice constant at a surface of the graded layer opposite the substrate, and
- wherein the first epitaxial oxide material comprises one of:
- (AlxdGa1-xd)2(SizdGe1-zd)O5 wherein 0≤xd≤1 and 0≤zd≤1;
- (AlxeGa1-xe)2LiO2 wherein 0≤xe≤1;
- and
- (MgxfZn1-xf-yfNiyf)2GeO4 wherein 0≤xf≤1, 0≤yf≤1.
A semiconductor structure comprising:
- a first region comprising a first epitaxial oxide material;
- and
- a graded region, located on the first region, comprising a graded epitaxial oxide material with a monotonic change in average composition along a growth axis, from a first average composition adjacent to the first region to a second average composition, and
- wherein the graded epitaxial oxide material comprises one of:
- (AlxdGa1-xd)2(SizdGe1-zd)O5 wherein 0≤xd≤1 and 0≤zd≤1;
- (AlxeGa1-xe)2LiO2 wherein 0<xe≤1;
- and
- (MgxfZn1-xf-yfNiyf)2GeO4 wherein 0≤xf≤1, 0≤yf≤1.
Dependencies are inferred from the claim text.