Semiconductor device
AssigneeNippon Telegraph and Telephone Corporation
InventorsKazuaki Ebata, Yoshitaka Taniyasu, Kazuhide Kumakura
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Abstract
A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.
Claims10
A semiconductor apparatus, comprising:
- a substrate;
- a buffer layer on and in contact with the substrate;
- an n-type semiconductor layer on and in contact with the buffer layer;
- a light-emitting layer on and in contact with a first portion of the n-type semiconductor layer;
- a first electrode on and in contact with a second portion of the n-type semiconductor layer and at least partially surrounding the light-emitting layer;
- an electron block layer on and in contact with the light-emitting layer;
- a p-type semiconductor layer on and in contact with the electron block layer, wherein:
- the p-type semiconductor layer includes a plurality of unit semiconductor layers;
- each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface;
- the p-type nitride semiconductor includes nitrogen and two or more elements;
- and
- each of the plurality of unit semiconductor layers has a composition changing in a stacking direction;
- a contact layer on and in contact with the p-type semiconductor layer;
- a semi-transparent layer on and in contact with the contact layer;
- and
- a second electrode on and in contact with a portion of the semi-transparent layer.
A method comprising:
- forming a buffer layer on and in contact with a substrate;
- forming an n-type semiconductor layer on and in contact with the buffer layer;
- forming a light-emitting layer on and in contact with a first portion of the n-type semiconductor layer;
- forming a first electrode on and in contact with a second portion of the n-type semiconductor layer and at least partially surrounding the light-emitting layer;
- forming an electron block layer on and in contact with the light-emitting layer;
- forming a p-type semiconductor layer on and in contact with the electron block layer, wherein:
- the p-type semiconductor layer includes a plurality of unit semiconductor layers;
- each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface;
- the p-type nitride semiconductor includes nitrogen and two or more elements;
- and
- each of the plurality of unit semiconductor layers has a composition changing in a stacking direction;
- forming a contact layer on and in contact with the p-type semiconductor layer;
- forming a semi-transparent layer on and in contact with the contact layer;
- and
- forming a second electrode on and in contact with a portion of the semi-transparent layer.
Dependencies are inferred from the claim text.