Iii-nitride-based high efficiency and high-power devices grown on or above a strain relaxed template

Abstract

A method of growing III-nitride-based devices, such as light emitting diodes (LEDs) and laser diodes (LDs) on or above a strain relaxed template (SRT). The SRT uses a thin, thermally decomposed, InGaN underlayer, which is referred to as a decomposition layer (DL). Above the DL is a n-type GaN or low composition InGaN decomposition stop layer (DSL). A buffer layer comprising an n-type InGaN/GaN superlattice (SL) is then grown. For an LD structure. an n-type waveguide layer comprising a second n-type InGaN/GaN SL is then grown. followed by an active region, a p-type electron blocking layer (EBL), a p-type waveguide layer comprising a p-type InGaN/GaN SL, and p-type GaN or p-type InGaN layers. For an LED structure, the waveguide layers may be omitted. In this disclosure, AlGaN means AlxGa(1-x)N with 1≥x≥0 and InGaN means InxGa(1-x)N with 1≥x≥0.

Dependencies are inferred from the claim text.