Epitaxial oxide materials, structures, and devices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.
Claims24
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer comprising a high work function metal;
- and
- a contact layer in contact with the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer forming a p-contact with the metal layer, the contact layer comprising:
- a chirp layer in contact with the metal layer, the chirp layer comprising a graded epitaxial oxide semiconductor material comprising a gradient in a composition in contact with the metal layer, and a thickness from greater than 0 nm to less than 20 nm.
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer comprising a low work function metal;
- and
- a contact layer in contact with the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer forming a n-contact with the metal layer, the contact layer comprising:
- a chirp layer in contact with the metal layer, the chirp layer comprising a graded epitaxial oxide semiconductor material comprising a gradient in a composition in contact with the metal layer, and a thickness from greater than 0 nm to less than 20 nm.
Dependencies are inferred from the claim text.