A semiconductor optical amplifier for laser devices, particularly of the quantum cascade type, which is adapted to emit luminous radiation when subjected to an electric current and which comprises:
- a quantum well structure, composed of high bandgap layers alternated with low bandgap layers, which is interposed between a lower contact layer and an upper contact element;
- input electrical conduction means and output electrical conduction means which are configured to allow a flow of an electric current through said quantum well structure;
- and further comprising a silicon-on-insulator substrate which comprises an upper layer of crystalline silicon, said upper layer of crystalline silicon constituting said lower contact layer,
- and wherein said high bandgap layers of the quantum well structure are made of a material chosen among oxides and nitrides of the following materials:
- silicon (Si), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta).