H01S 5/3409
Special grinsch structures
Official title: {special GRINSCH structures}
H01S5/3409 (Special grinsch structures) appears on 98 US grants and 45 published applications in this corpus.
Search patents in H01S- Granted patents
- 98
- Published applications
- 45
- Assignees
- 58
- Inventors
- 235
- Latest grant
- 9 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 6 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 0 |
| 2002 | 7 | 7 |
| 2003 | 4 | 4 |
| 2004 | 7 | 11 |
| 2005 | 2 | 4 |
| 2006 | 7 | 1 |
| 2007 | 4 | 0 |
| 2008 | 1 | 2 |
| 2009 | 1 | 1 |
| 2010 | 1 | 1 |
| 2011 | 2 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 2 | 0 |
| 2016 | 2 | 2 |
| 2017 | 1 | 1 |
| 2018 | 0 | 1 |
| 2019 | 2 | 3 |
| 2020 | 1 | 0 |
| 2021 | 2 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 2 |
| 2024 | 0 | 0 |
| 2025 | 2 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Dilute nitride long-wavelength emitter with improved performance over temperature9 Sep 2025US 12,413,048 B2Lumentum Operations LLC
- Semiconductor laser with a mode expansion layer18 Mar 2025US 12,255,440 B2Huawei Technologies Co., Ltd.
- Semiconductor laser array, semiconductor laser element, semiconductor laser module, and wavelength-variable laser assembly3 May 2022US 11,322,912 B2Furukawa Electric Co., Ltd.
- Surface-emitting laser device and light emitting device including the same23 Nov 2021US 11,183,813 B2Suzhou Lekin Semiconductor Co., Ltd.
- AlInGaAs/InGaAsP/InP edge emitting semiconductor laser including multiple monolithic laser diodes19 Oct 2021US 11,152,767 B1SemiNex Corporation
- Circular beam telecommunications wavelength edge-emitting semiconductor laser28 May 2026US 2026/0149239 A1University of Notre Dame du Lac
- Dilute nitride long-wavelength emitter with improved performance over temperature17 Aug 2023US 2023/0261443 A1Lumentum Operations LLC
- Alingaas/ingaasp/inp edge emitting semiconductor laser including multiple monolithic laser diodes13 Jul 2023US 2023/0223742 A1SemiNex Corporation
- Semiconductor Laser With a Mode Expansion Layer14 Apr 2022US 2022/0115841 A1Huawei Technologies Co., Ltd.
- Light-emitting device17 Jun 2021US 2021/0184434 A1Sony Semiconductor Solutions Corporation
Most cited
By later US patents
- Indium gallium nitride smoothing structures for III-nitride devices274US 6,635,904 B2Lumileds Lighting U.S., LLC · 2003
- Indium gallium nitride smoothing structures for III-nitride devices225US 6,489,636 B1Lumileds Lighting U.S., LLC · 2002
- Compound semiconductor device based on gallium nitride75US 6,388,275 B1Sanyo Electric Co., Ltd. · 2002
- Semiconductor laser with ZnMgSSe cladding layers69US 5,515,393 ASony Corporation · 1996
- Ion-implanted planar-buried-heterostructure diode laser68US 5,048,038 AThe United States of America as represented by the United States Department of Energy · 1991