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US 11,183,813 B2Granted
Surface-emitting laser device and light emitting device including the same
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorsHo Jae Kang, Jung Hun Jang
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Abstract
Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.
Claims20
A surface-emitting laser device comprising:
- a first reflective layer and a second reflective layer;
- and
- an active region disposed between the first reflective layer and the second reflective layer,
- wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer,
- wherein the second reflective layer includes a first group second reflective layer and a second group second reflective layer,
- wherein the first group second reflective layer includes:
- a first-first layer having a first aluminum concentration;
- a first-second layer having a second aluminum concentration higher than the first aluminum concentration and disposed on the first-first layer;
- and
- a first-third layer;
- a first-fourth layer having a fourth aluminum concentration that varies from the second aluminum concentration to the first aluminum concentration and is disposed on the first-second layer,
- wherein the first-second layer is disposed between the first-first layer and the first-fourth layer,
- wherein the first-third layer is disposed between the first-second layer and the first-fourth layer, and
- wherein the first-first layer is more near an aperture region than is the first-second layer,
- wherein the second reflective layer is doped with a second conductive dopant,
- wherein a doping concentration of the second conductive dopant of the first-fourth layer is higher than that of the first-first layer and/or the first-second layer,
- wherein the active region comprises:
- a first cavity region comprising a first conductive doping layer;
- a second cavity region comprising a second conductive doping layer;
- and
- an active layer between the first cavity region and the second cavity region,
- wherein a thickness of the first conductive doping layer is 10% to 70% of a thickness of the first cavity region,
- wherein the first cavity region includes a first-first cavity layer in contact with the first reflective layer and a first-second cavity layer in contact with the active layer,
- wherein the first conductive doping layer is disposed only in the first-first cavity layer in contact with the first reflective layer,
- wherein a doping concentration of the first conductive doping layer increases in a direction of the first reflective layer from of the active layer,
- wherein the second cavity region includes a second-first cavity layer in contact with the active layer and a second-second cavity layer in contact with the second reflective layer,
- wherein the second-first cavity layer is in direct contact with the second-second cavity layer, wherein the second conductive doping layer is disposed only in the second-second cavity layer, and
- wherein the first cavity region includes an AlxGaAs-based layer (O<X<1), and a concentration of Al in the first cavity region is controlled to decrease in a direction of the active layer.
25 more elements
A surface-emitting laser device comprising:
- a first reflective layer and a second reflective layer;
- and
- an active region disposed between the first reflective layer and the second reflective layer,
- wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer,
- wherein the second reflective layer includes a first group second reflective layer and a second group second reflective layer,
- wherein the first group second reflective layer includes:
- a second-first reflective layer having a first aluminum concentration;
- a second-second reflective layer having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the second-first reflective layer;
- and
- a second-third reflective layer disposed between the second-first reflective layer and the second-second reflective layer, and having a third aluminum concentration that varies from the first aluminum concentration to the second aluminum concentration within the second-third reflective layer,
- wherein a second conductive doping concentration of the second-third reflective layer is higher than a second conductive doping concentration of the second-first reflective layer or a conductive doping concentration of the second-second reflective layer,
- wherein the active region comprises:
- a first cavity region comprising a first conductive doping layer;
- a second cavity region comprising a second conductive doping layer;
- and
- an active layer between the first cavity region and the second cavity region,
- wherein a thickness of the first conductive doping layer is 10% to 70% of a thickness of the first cavity region,
- wherein the first cavity region includes a first-first cavity layer in contact with the first reflective layer and a first-second cavity layer in contact with the active layer,
- wherein the first conductive doping layer is disposed only in the first-first cavity layer in contact with the first reflective layer,
- wherein a doping concentration of the first conductive doping layer increases in steps in a direction of the first reflective layer from the active layer,
- wherein the second cavity region includes a second-first cavity layer in contact with the active layer and a second-second cavity layer in contact with the second reflective layer,
- wherein the second-first cavity layer is in direct contact with the second-second cavity layer,
- wherein the second conductive doping layer is disposed only in the second-second cavity layer,
- wherein the first cavity region includes an AlxGaAs-based layer (O<X<1), and a concentration of Al in the first cavity region is controlled to decrease in a direction of the active layer, and
- wherein a top surface of the first reflective layer directly contacts a bottom surface of the first cavity region.
22 more elements
A surface-emitting laser device comprising:
- a first reflective layer and a second reflective layer;
- and
- an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer,
- wherein the second reflective layer includes a first group second reflective layer and a second group second reflective layer, and
- wherein the first group second reflective layer includes:
- a second-first reflective layer having a first refractive index;
- a second-second reflective layer having a second refractive index lower than the first refractive index and disposed on one side of the second-first reflective layer;
- and
- a second-third reflective layer having a third refractive index between the first refractive index and the second refractive index and disposed between the second-first reflective layer and the second-second reflective layer,
- wherein a second conductive doping concentration of the second-third reflective layer is higher than a second conductive doping concentration of the second-first reflective layer or the second-second reflective layer,
- wherein the active region comprises:
- a first cavity region comprising a first conductive doping layer;
- a second cavity region comprising a second conductive doping layer;
- and
- an active layer between the first cavity region and the second cavity region,
- wherein a thickness of the first conductive doping layer is 10% to 70% of a thickness of the first cavity region,
- wherein the first cavity region includes a first-first cavity layer in contact with the first reflective layer and a first-second cavity layer in contact with the active layer,
- wherein the first conductive doping layer is disposed only in the first-first cavity layer in contact with the first reflective layer,
- wherein a doping concentration of the first conductive doping layer increases in steps in a direction of the first reflective layer from the active layer,
- wherein the second cavity region includes a second-first cavity layer in contact with the active layer and a second-second cavity layer in contact with the second reflective layer,
- wherein the second-first cavity layer is in direct contact with the second-second cavity layer,
- wherein the second conductive doping layer is disposed only in the second-second cavity layer,
- wherein the first cavity region includes an AlxGaAs-based layer (O<X<1), and a concentration of Al in the first cavity region is controlled to decrease in a direction of the active layer, and
- wherein a top surface of the first reflective layer directly contacts a bottom surface of the first cavity region.
21 more elements
A surface-emitting laser device comprising:
- a first reflective layer including a first conductive dopant;
- a second reflective layer including a second conductive dopant;
- and
- an active region disposed between the first reflective layer and the second reflective layer,
- wherein the active region includes a first cavity region disposed on the first reflective layer and an active layer disposed on the first cavity region, the active layer including a quantum well and a quantum barrier,
- wherein the first cavity region is adjacent to the first reflective layer and includes a first conductive doping layer,
- wherein the active region includes a second cavity region comprising a second conductive doping layer,
- wherein a thickness of the first conductive doping layer is 10% to 70% of a thickness of the first cavity region,
- wherein the first cavity region includes a first-first cavity layer in contact with the first reflective layer and a first-second cavity layer in contact with the active layer,
- wherein the first conductive doping layer is disposed only in the first-first cavity layer in contact with the first reflective layer,
- wherein a doping concentration of the first conductive doping layer increases in steps in a direction of the first reflective layer from the active layer,
- wherein the second cavity region includes a second-first cavity layer in contact with the active layer and a second-second cavity layer in contact with the second reflective layer,
- wherein the second-first cavity layer is in direct contact with the second-second cavity layer,
- wherein the second conductive doping layer is disposed only in the second-second cavity layer,
- wherein the first cavity region includes an AlxGaAs-based layer (O<X<1), and a concentration of Al in the first cavity region is controlled to decrease in a direction of the active layer and
- wherein a top surface of the first reflective layer directly contacts a bottom surface of the first cavity region.
13 more elements
Dependencies are inferred from the claim text.