Semiconductor laser with a mode expansion layer
AssigneeHuawei Technologies Co., Ltd.
InventorsNing Cheng, Xiang Liu, Frank Effenberger
Life of this patent
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Abstract
A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.
Claims21
A method of manufacturing a semiconductor laser and comprising:
- epitaxially growing a first cladding layer above a substrate;
- epitaxially growing a first confinement layer above the first cladding layer;
- epitaxially growing a quantum well layer above the first confinement layer;
- epitaxially growing a second confinement layer above the quantum well layer;
- epitaxially growing a second cladding layer above the second confinement layer;
- and
- epitaxially growing a first mode expansion layer within the first cladding layer so that the first mode expansion layer extends across a first width of the first cladding layer but not a first length or a first height of the first cladding layer, or epitaxially growing a second mode expansion layer within the second cladding layer so that the second mode expansion layer extends across a second width of the second cladding layer but not a second length or a second height of the first cladding layer.
A semiconductor laser comprising:
- a first cladding layer epitaxially grown above a substrate;
- a first confinement layer epitaxially grown above the first cladding layer;
- a quantum well layer epitaxially grown above the first confinement layer;
- a second confinement layer epitaxially grown above the quantum well layer;
- a second cladding layer epitaxially grown above the second confinement layer;
- and
- a first mode expansion layer epitaxially grown within the first cladding layer so that the first mode expansion layer extends across a first width of the first cladding layer but not a first length or a first height of the first cladding laver, or a second mode expansion layer epitaxially grown within the second cladding layer so that the second mode expansion layer extends across a second width of the second cladding layer but not a second length or a second height of the first cladding layer.
A semiconductor laser prepared by a process comprising the steps of:
- epitaxially growing a first cladding layer above a substrate;
- epitaxially growing a first confinement layer above the first cladding layer;
- epitaxially growing a quantum well layer above the first confinement layer;
- epitaxially growing a second confinement layer above the quantum well layer,
- epitaxially growing a second cladding layer above the second confinement layer;
- and
- epitaxially growing a first mode expansion layer within the first cladding layer so that the first mode expansion layer extends across a first width of the first cladding layer but not a first length or a first height of the first cladding layer, or epitaxially growing a second mode expansion layer within the second cladding layer so that the second mode expansion layer extends across a second width of the second cladding layer but not a second length or a second height of the first cladding layer.
Dependencies are inferred from the claim text.