US 5,515,393 A · Semiconductor laser with ZnMgSSe cladding layers

Abstract

A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.

Claims30

Dependent claims

A semiconductor laser comprising:

a first electrode;
a compound semiconductor substrate in electrical contact with said first electrode;
a first cladding layer made of n-type Zn.sub.1-x-y Cd.sub.x Mg.sub.y S.sub.a Te.sub.b Se.sub.1-a-b (0.ltoreq.x<1, 0.ltoreq.y<1, 0.ltoreq.a<1 and 0.ltoreq.b<1) on said compound semiconductor substrate;
an active layer on said first cladding layer;
a second cladding layer made of p-type Zn.sub.1-x-y Cd.sub.x Mg.sub.y S.sub.a Te.sub.b Se.sub.1-a-b (0.ltoreq.x<1, 0.ltoreq.y<1, 0.ltoreq.a<1 and 0.ltoreq.b<1) on said active layer;
and
a second electrode on said second cladding layer,
said semiconductor laser including a portion having a low impurity concentration in said first cladding layer along the interface between said first cladding layer and said active layer.

5 more elements

A semiconductor laser comprising:

first electrode;
compound semiconductor substrate in electrical contact with said first electrode;
a first cladding layer made of a first conductivity type of a ZnMgSSe compound semiconductor on said compound semiconductor substrate;
a first optical guiding layer of a first conductivity type on said first cladding layer;
an active layer on said first optical guiding layer, said active layer including a quantum well layer whose thickness is 2.about.20 nm;
second optical guiding layer of a second conductivity type on said active layer;
a second cladding layer made of a second conductivity type of a ZnMgSSe compound semiconductor on said second optical guiding layer;
and
second electrode on said second cladding layer.

6 more elements

A semiconductor laser comprising:

a first electrode;
a compound semiconductor substrate in electrical contact with said first electrode;
a first cladding layer of a first conductivity type on said compound semiconductor substrate;
an active layer on said first cladding layer;
a second cladding layer of a second conductivity type on said active layer;
and
said first cladding layer and said second cladding layer being made of a ZnMgSSe compound semiconductor,
said active layer including a plurality of quantum well layers whose total thickness is 10.about.35 nm.

5 more elements

A semiconductor laser comprising:

a first electrode;
a compound semiconductor substrate in electrical contact with said first electrode;
a first cladding layer of a first conductivity type on said compound semiconductor substrate;
an active layer on said first cladding layer;
a second cladding layer of J second conductivity type on said active layer;
and
a second electrode on said second cladding layer,
said first cladding layer and said second cladding layer being made of a ZnMgSSe compound semiconductor,
said active layer having a thickness of 15.about.60 nm and being made of at least one of znSe and ZnCdSe compound semiconductor.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor laser with ZnMgSSe cladding layers

Life of this patent

Semiconductor laser with ZnMgSSe cladding layers

Life of this patent

Abstract

Claims30