AlInGaAs/InGaAsP/InP edge emitting semiconductor laser including multiple monolithic laser diodes

The device as claimed in 1, wherein the Aluminum Indium gallium Arsenide quantum wells being sized between 5 nm and 10 nm, wherein the active region is placed between two confining layers of opposite conductive doping where p-doped confining layers start with a concentration of 5e16 cm-3 −25%/+50% and increase to a final concentration of 1e17 cm-3, −25%+50%, and an interface layer that immediately follows the p-doped confining layers has a fixed doping concentration which is between the final doping concentration of the confining layers and 1e18 cm-3, +300%.

An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas differ from one to another in terms of their layer thicknesses and/or their material compositions such that at least two emission areas have different emission wavelengths by at least 5 nm.

An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas are the same or differ from one to another in terms of their layer thicknesses and/or their material compositions such that all emission areas have the same emission wavelengths within 5 nm.