US 12,413,048 B2 · Dilute nitride long-wavelength emitter with improved performance over temperature

Abstract

In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

Claims20

Dependent claims

A method, comprising:

forming a quantum well (QW) layer using an epitaxial growth process, the epitaxial growth process being performed according to a first growth mode to form the QW layer, the QW layer comprising a first dilute nitride material;
and
forming a quantum well barrier (QWB) layer using the epitaxial growth process, the epitaxial growth process being performed according to a second growth mode to form the QWB layer, the QWB layer comprising a second dilute nitride material, wherein at least one of:
a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode, or
a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/808,030Filed 21 Jun 2022 · us provisional application

Priority

16 Feb 2022

Published

US 2023/0261443 A117 Aug 2023

Granted

9 Sep 2025

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H01S 5/3409
Comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index…:…
H01S 5/18311
Having a special structure for lateral current or light confinement: using selective oxidation
H01S 5/18358
Having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]: containing spacer layers to adjust the phase of the light…
H01S 5/309
Doping of the active layer: doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well…

Dilute nitride long-wavelength emitter with improved performance over temperature

Life of this patent

Dilute nitride long-wavelength emitter with improved performance over temperature

Life of this patent

Abstract

Claims20