Compound semiconductor device based on gallium nitride
AssigneeSanyo Electric Co., Ltd.
InventorTakashi Kano
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Abstract
A compound semiconductor device based on gallium nitride which can have a thick gallium nitride semiconductor layer serving to prevent cracks or defects attributable to a strain caused by a difference in lattice constant or coefficient of thermal expansion. Between a contact layer 4 consisting of a film of n-type GaN and a clad layer 5 consisting of a film of a n-type AlyGa1−yN is interposed a crack-preventive buffer layer 5 having both of the compositions of the two films.
Claims6
A compound semiconductor device based on gallium nitride comprising
- a buffer layer having both compositions substantially the same as those of a first compound semiconductor layer comprising of gallium nitride and a second compound semiconductor layer comprising of aluminum gallium nitride, wherein said buffer layer is interposed between the first compound semiconductor layer and the second compound semiconductor layer.
A compound semiconductor device based on gallium nitride comprising;
- an one-type conductive contact layer containing a first compound semiconductor layer comprising of gallium nitride,
- an one-type conductive clad layer containing a second compound semiconductor layer comprising of aluminum gallium nitride,
- an active layer of a single quantum well structure composed of indium gallium nitride,
- an other-type conductive clad layer containing a second compound semiconductor layer comprising of aluminum gallium nitride,
- an other-type conductive contact layer containing the first compound semiconductor layer comprising of gallium nitride, and
- a buffer layer having both compositions substantially the same as those of said first and second compound semiconductor layers, wherein said buffer layer is interposed at least between said one-type conductive contact layer and said other-type conductive clad layer.
A compound semiconductor device based on gallium nitride comprising
- a first compound semiconductor layer comprising of gallium nitride and a second compound semiconductor layer comprising of aluminum gallium nitride, and
- a buffer layer having both compositions substantially the same as those of the first and second compound semiconductor layers, wherein said buffer layer is interposed between the first compound semiconductor layer and the second compound semiconductor layer.
Dependencies are inferred from the claim text.