G11C 16/0466
Comprising cells with charge storage in an insulating layer
Official title: {comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] (G11C16/0483, G11C16/0491 take precedence)}
G11C16/0466 (Comprising cells with charge storage in an insulating layer) appears on 2,267 US grants and 2,125 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,267
- Published applications
- 2,125
- Assignees
- 350
- Inventors
- 2,455
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 17 | 0 |
| 1978 | 29 | 0 |
| 1979 | 12 | 0 |
| 1980 | 7 | 0 |
| 1981 | 9 | 0 |
| 1982 | 6 | 0 |
| 1983 | 6 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 6 | 0 |
| 1993 | 2 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 3 | 0 |
| 1997 | 7 | 0 |
| 1998 | 11 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 34 | 12 |
| 2002 | 48 | 53 |
| 2003 | 78 | 109 |
| 2004 | 96 | 107 |
| 2005 | 100 | 128 |
| 2006 | 118 | 173 |
| 2007 | 125 | 145 |
| 2008 | 107 | 108 |
| 2009 | 100 | 92 |
| 2010 | 94 | 70 |
| 2011 | 80 | 69 |
| 2012 | 67 | 62 |
| 2013 | 53 | 47 |
| 2014 | 71 | 66 |
| 2015 | 79 | 78 |
| 2016 | 114 | 96 |
| 2017 | 96 | 98 |
| 2018 | 89 | 88 |
| 2019 | 109 | 115 |
| 2020 | 110 | 84 |
| 2021 | 76 | 69 |
| 2022 | 54 | 73 |
| 2023 | 57 | 63 |
| 2024 | 57 | 51 |
| 2025 | 48 | 38 |
| 2026 | 25 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device29 Sep 2026US 12,751,014 B2Semiconductor Energy Laboratory Co.Ltd.
- NOR-type memory device, method of manufacturing NOR-type memory device, and electronic apparatus including memory device8 Sep 2026US 12,733,174 B2Institute of Microelectronics, Chinese Academy of Sciences
- Multi-level memristor elements25 Aug 2026US 12,720,766 B2Cirrus Logic, Inc.
- Memory transistor with multiple charge storage layers21 Jul 2026US 12,690,238 B2Longitude Flash Memory Solutions Ltd.
- Semiconductor memory device24 Sep 2026US 2026/0290470 A1Kioxia Corporation
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279460 A1Silicon Motion, Inc.
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279461 A1Silicon Motion, Inc.
- Non-volatile memory and corresponding manufacturing method13 Aug 2026US 2026/0237437 A1STMicroelectronics International N. V.
- Capacitive synaptic device13 Aug 2026US 2026/0239634 A1Semron GmbH
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping1,069US 5,768,192 ASaifun Semiconductors Ltd. · 1998
- Three-dimensional memory array and method of fabrication829US 6,420,215 B1Matrix Semiconductor, Inc. · 2002
- Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data419US 7,173,857 B2Renesas Technology Corp. · 2007
- Multigate semiconductor device with vertical channel current and method of fabrication396US 6,580,124 B1Matrix Semiconductor, Inc. · 2003