G11C 16/00
Erasable programmable read-only memories
Official title: Erasable programmable read-only memories (G11C14/00 takes precedence)
G11C16/00 (Erasable programmable read-only memories) appears on 35,011 US grants and 33,146 published applications in this corpus.
Search patents in G11C- Granted patents
- 35,011
- Published applications
- 33,146
- Assignees
- 1,923
- Inventors
- 21,675
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 16 | 0 |
| 1977 | 23 | 0 |
| 1978 | 42 | 0 |
| 1979 | 20 | 0 |
| 1980 | 24 | 0 |
| 1981 | 33 | 0 |
| 1982 | 34 | 0 |
| 1983 | 47 | 0 |
| 1984 | 50 | 0 |
| 1985 | 39 | 0 |
| 1986 | 44 | 0 |
| 1987 | 62 | 0 |
| 1988 | 75 | 0 |
| 1989 | 108 | 0 |
| 1990 | 95 | 0 |
| 1991 | 121 | 0 |
| 1992 | 101 | 0 |
| 1993 | 142 | 0 |
| 1994 | 229 | 0 |
| 1995 | 249 | 0 |
| 1996 | 317 | 0 |
| 1997 | 347 | 0 |
| 1998 | 464 | 0 |
| 1999 | 542 | 0 |
| 2000 | 623 | 0 |
| 2001 | 640 | 205 |
| 2002 | 655 | 650 |
| 2003 | 710 | 731 |
| 2004 | 709 | 833 |
| 2005 | 699 | 1050 |
| 2006 | 863 | 1235 |
| 2007 | 983 | 1297 |
| 2008 | 1021 | 1438 |
| 2009 | 1124 | 1286 |
| 2010 | 1163 | 1215 |
| 2011 | 1216 | 1275 |
| 2012 | 1191 | 1290 |
| 2013 | 1310 | 1252 |
| 2014 | 1499 | 1484 |
| 2015 | 1597 | 1344 |
| 2016 | 1677 | 1387 |
| 2017 | 1422 | 1192 |
| 2018 | 1193 | 1128 |
| 2019 | 1400 | 1553 |
| 2020 | 1648 | 1675 |
| 2021 | 1587 | 1685 |
| 2022 | 1539 | 1803 |
| 2023 | 1518 | 1781 |
| 2024 | 1537 | 1715 |
| 2025 | 1380 | 1419 |
| 2026 | 883 | 1223 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Managing read timing in semiconductor devices6 Oct 2026US 12,754,674 B2Macronix International Co., Ltd.
- Power supply circuit, semiconductor device and electronic device6 Oct 2026US 12,755,762 B2SK hynix Inc.
- Low-power programmable erasable nonvolatile memory6 Oct 2026US 12,755,787 B2Yield Microelectronics Corp.
- Address fault detection in a memory system6 Oct 2026US 12,755,788 B2Silicon Storage Technology, Inc.
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Nonvolatile memory device supporting high-efficiency i/o interface8 Oct 2026US 2026/0310383 A1Samsung Electronics Co., Ltd.
- In-memory computing of interactions between variables of high-order functions8 Oct 2026US 2026/0310744 A1Hewlett Packard Enterprise Development LP
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Memory apparatus8 Oct 2026US 2026/0311762 A1Winbond Electronics Corp.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping1,069US 5,768,192 ASaifun Semiconductors Ltd. · 1998
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Multi-state EEPROM having write-verify control circuit972US 5,570,315 AKabushiki Kaisha Toshiba · 1996