C23C 16/34
Nitrides
Official title: Nitrides {(C23C16/303 takes precedence)}
C23C16/34 (Nitrides) appears on 3,232 US grants and 4,157 published applications in this corpus.
Search patents in C23C- Granted patents
- 3,232
- Published applications
- 4,157
- Assignees
- 854
- Inventors
- 6,494
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 4 | 0 |
| 1978 | 6 | 0 |
| 1979 | 5 | 0 |
| 1980 | 4 | 0 |
| 1981 | 7 | 0 |
| 1982 | 6 | 0 |
| 1983 | 4 | 0 |
| 1984 | 5 | 0 |
| 1985 | 9 | 0 |
| 1986 | 7 | 0 |
| 1987 | 11 | 0 |
| 1988 | 16 | 0 |
| 1989 | 12 | 0 |
| 1990 | 10 | 0 |
| 1991 | 14 | 0 |
| 1992 | 11 | 0 |
| 1993 | 21 | 0 |
| 1994 | 27 | 0 |
| 1995 | 18 | 0 |
| 1996 | 17 | 0 |
| 1997 | 32 | 0 |
| 1998 | 32 | 0 |
| 1999 | 45 | 0 |
| 2000 | 57 | 0 |
| 2001 | 53 | 21 |
| 2002 | 71 | 79 |
| 2003 | 54 | 84 |
| 2004 | 52 | 87 |
| 2005 | 61 | 118 |
| 2006 | 58 | 155 |
| 2007 | 55 | 106 |
| 2008 | 46 | 120 |
| 2009 | 72 | 125 |
| 2010 | 95 | 114 |
| 2011 | 83 | 103 |
| 2012 | 91 | 117 |
| 2013 | 81 | 95 |
| 2014 | 86 | 113 |
| 2015 | 81 | 159 |
| 2016 | 107 | 170 |
| 2017 | 126 | 188 |
| 2018 | 136 | 232 |
| 2019 | 153 | 247 |
| 2020 | 188 | 247 |
| 2021 | 182 | 270 |
| 2022 | 187 | 300 |
| 2023 | 164 | 269 |
| 2024 | 215 | 225 |
| 2025 | 213 | 261 |
| 2026 | 136 | 152 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing a redistribution layer, redistribution layer, integrated circuit and methods for electrically testing and protecting the integrated circuit6 Oct 2026US 12,753,493 B2STMicroelectronics S,r.l.
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Film forming method, film forming device, and method for manufacturing semiconductor device8 Sep 2026US 12,729,423 B2Tokyo Electron Limited
- Substrate treatment method8 Sep 2026US 12,729,428 B2Jusung Engineering Co., Ltd.
- Area selective deposition of metal film on silicon containing surfaces utilizing alcohols8 Oct 2026US 2026/0308761 A1Merck Patent GmbH
- Semiconductor wafer processing tool with improved leak check8 Oct 2026US 2026/0314308 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing apparatus1 Oct 2026US 2026/0297737 A1Tokyo Electron Limited
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002