C23C 16/342
Boron nitride
Official title: {Boron nitride}
C23C16/342 (Boron nitride) appears on 215 US grants and 237 published applications in this corpus.
Search patents in C23C- Granted patents
- 215
- Published applications
- 237
- Assignees
- 145
- Inventors
- 614
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 6 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 7 | 0 |
| 1998 | 6 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 1 |
| 2002 | 3 | 3 |
| 2003 | 1 | 3 |
| 2004 | 1 | 5 |
| 2005 | 2 | 0 |
| 2006 | 1 | 4 |
| 2007 | 0 | 3 |
| 2008 | 2 | 2 |
| 2009 | 1 | 5 |
| 2010 | 2 | 8 |
| 2011 | 2 | 5 |
| 2012 | 7 | 4 |
| 2013 | 4 | 13 |
| 2014 | 6 | 9 |
| 2015 | 4 | 7 |
| 2016 | 5 | 10 |
| 2017 | 8 | 14 |
| 2018 | 9 | 9 |
| 2019 | 11 | 14 |
| 2020 | 13 | 12 |
| 2021 | 11 | 17 |
| 2022 | 11 | 23 |
| 2023 | 13 | 25 |
| 2024 | 15 | 14 |
| 2025 | 12 | 17 |
| 2026 | 13 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method and system for depositing boron nitride using pulsed chemical vapor deposition8 Sep 2026US 12,729,437 B2ASM IP Holding B. V.
- Low-transmission-loss copper-based composite material and preparation method thereof, PCB, and electronic component30 Jun 2026US 12,668,890 B2Songshan Lake Materials Laboratory
- Method for grain boundary analysis of polycrystalline two-dimensional materials26 May 2026US 12,638,398 B2Ajou University Industry-Academic Cooperation Foundation
- Methods for providing a precursor mixture to a reaction chamber12 May 2026US 12,624,442 B2ASM IP Holding B. V.
- Device for chemical vapour deposition5 May 2026US 12,618,150 B2Safran Ceramics
- Electron spin containing materials and methods for producing said materials10 Sep 2026US 2026/0265062 A1Archer Materials Limited
- Method for creating thermally conductive, electrically insulating materials20 Aug 2026US 2026/0242930 A1United Protective Technologies, LLC
- System for providing a precursor mixture to a reaction chamber20 Aug 2026US 2026/0242935 A1ASM IP Holding B. V.
- Method of forming amorphous layer of boron nitride and method of forming amorphous material layer20 Aug 2026US 2026/0247883 A1Samsung Electronics Co., Ltd.
- Methods and systems for forming boron-containing layers25 Jun 2026US 2026/0176750 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method of making hard, transparent amorphous hydrogenated boron nitride films317US 5,518,780 AFord Motor Company · 1996
- Boron nutride membrane in wafer structure239US 5,270,125 ARedwood Microsystems, Inc. · 1993
- Film forming method and film forming device234US 6,958,175 B2Kabushiki Kaisha Watanabe Shoko · 2005
- Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same197US 6,740,977 B2Samsung Electronics Co., Ltd. · 2004
- Deposition of boron-containing films from decaborane153US 4,957,773 ASyracuse University · 1990