Film forming method and film forming device
AssigneeKabushiki Kaisha Watanabe Shoko
InventorsHitoshi Sakamoto, Noriaki Ueda, Takashi Sugino
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Abstract
A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.
Claims8
A film forming method characterized by generating a plasma within a film formation chamber having a nitrogen gas nozzle, a diborane gas nozzle, and a high frequency antenna, exciting mainly a nitrogen gas within the film formation chamber by providing the nitrogen gas nozzle closer to the high frequency antenna than is the diborane gas nozzle, and then reacting the excited nitrogen gas with a diborane gas diluted with a hydrogen gas, thereby forming a boron nitride film on a substrate.
A film forming method characterized by generating a plasma within a film formation chamber, exciting mainly a nitrogen gas within the film formation chamber, and then reacting the excited nitrogen gas with a diborane gas diluted with a hydrogen gas, and an organic gas, thereby forming a boron carbonitride film on a substrate.
A film forming apparatus characterized by:
- plasma generation means provided in an upper part of a film formation chamber for generating a plasma within the film formation chamber;
- a substrate holding portion provided in a lower part of the film formation chamber;
- nitrogen gas introduction means provided for introducing a nitrogen gas into the film formation chamber;
- and
- diborane gas introduction means provided for introducing a diborane gas diluted with a hydrogen gas to an interior of the film formation chamber below the nitrogen gas introduction means.
A film forming apparatus characterized by:
- plasma generation means provided in an upper part of a film formation chamber for generating a plasma within the film formation chamber;
- a substrate holding portion provided in a lower part of the film formation chamber;
- nitrogen gas introduction means provided for introducing a nitrogen gas into the film formation chamber;
- and
- means provided for independently introducing a diborane gas diluted with a hydrogen gas, and an organic gas, to an interior of the film formation chamber below the nitrogen gas introduction means.
Dependencies are inferred from the claim text.