Method and system for depositing boron nitride using pulsed chemical vapor deposition

A cyclic deposition method of depositing a boron nitride film on a surface of a substrate,

• the method comprising:
• providing the substrate in a reaction chamber, the reaction chamber comprising a gas distribution assembly, a susceptor, and a reaction space;
• providing a reactant into the reaction space;
• forming a plasma within the reaction space between the gas distribution assembly and the susceptor using the reactant;
• and
• pulsing a precursor into the reaction space to thereby form the boron nitride film,
• wherein the precursor comprises boron and nitrogen;
• wherein the reactant is provided continuously during the pulsing of the precursor into the reaction chamber;
• wherein the reactant consists of 30-99% argon and/or helium and 1-70% hydrogen;
• and
• wherein the plasma is continuous during a plurality of steps of pulsing the precursor.