Methods and systems for forming boron-containing layers
AssigneeASM IP Holding B.V.
InventorsJoão Ricardo Antunes Afonso, Kai Okabe, Ranjit Rohidas Borude, Ming Liu, Mikko Tapani Ruoho, Viljami Pore
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Abstract
Methods for forming boron nitride layer on a surface of a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise the steps of providing a substrate withing a reaction chamber; and executing at least one deposition cycle. The deposition cycle comprises providing a boron precursor into the reaction chamber, the boron precursor comprising boron halide; and providing a reactive species generated from a plasma produced from a reactant gas into the reaction chamber.
Claims17
A method of forming boron nitride layer on a surface of a substrate, the method comprising the steps of:
- providing a substrate withing a reaction chamber;
- and
- executing at least one deposition cycle, wherein the deposition cycle comprises
- providing a boron precursor into the reaction chamber, the boron precursor comprising boron halide;
- and
- providing a reactive species generated from a plasma produced from a reactant gas into the reaction chamber.
A system for forming boron nitride layer on a surface of a substrate, the system comprising:
- a reaction chamber for accommodating a substrate;
- a boron precursor source in fluid communication via a first valve with the reaction chamber;
- a reactant gas source in fluid communication via a second valve with the reaction chamber;
- a controller operably connected to the first valve and the second valve and configured and programmed to control:
- supplying a boron precursor in the reaction chamber;
- supplying a reactant gas;
- and
- depositing the boron nitride on the substrate.
Dependencies are inferred from the claim text.