C23C 16/347
Carbon nitride
Official title: {Carbon nitride}
C23C16/347 (Carbon nitride) appears on 52 US grants and 60 published applications in this corpus.
Search patents in C23C- Granted patents
- 52
- Published applications
- 60
- Assignees
- 40
- Inventors
- 174
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 2 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 3 |
| 2010 | 1 | 4 |
| 2011 | 1 | 1 |
| 2012 | 1 | 1 |
| 2013 | 0 | 3 |
| 2014 | 4 | 3 |
| 2015 | 2 | 2 |
| 2016 | 2 | 2 |
| 2017 | 0 | 3 |
| 2018 | 3 | 8 |
| 2019 | 3 | 4 |
| 2020 | 7 | 5 |
| 2021 | 5 | 6 |
| 2022 | 2 | 1 |
| 2023 | 3 | 2 |
| 2024 | 4 | 3 |
| 2025 | 1 | 3 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Film of graphitic carbon nitride for photoanode and a method for forming the same14 Jul 2026US 12,680,182 B2City University of Hong Kong
- Method for producing N-doped carbon nanomesh27 May 2025US 12,312,679 B2Joz̃Stefan Institute
- Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus20 Aug 2024US 12,065,736 B2Kokusai Electric Corporation
- Method of forming a nitrogen-containing carbon film and system for performing the method20 Aug 2024US 12,068,154 B2ASM IP Holding B. V.
- Method and system for forming a conformal silicon carbon nitride layer and structure formed using same9 Jul 2024US 12,031,205 B2ASM IP Holding B. V.
- Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium5 Mar 2026US 2026/0068558 A1Kokusai Electric Corporation
- Film of graphitic carbon nitride for photoanode and a method for forming the same14 Aug 2025US 2025/0257485 A1City University of Hong Kong
- Silanols and silanediols17 Jul 2025US 2025/0230175 A1Versum Materials US, LLC
- Method of cleaning a plasma processing device17 Apr 2025US 2025/0122615 A1SPTS Technologies Limited
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus31 Oct 2024US 2024/0363334 A1Kokusai Electric Corporation
Most cited
By later US patents
- Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen564US 5,877,095 ANippondenso Co., Ltd. · 1999
- Organoaminosilane precursors and methods for making and using same453US 8,771,807 B2Air Products and Chemicals, Inc. · 2014
- Method for depositing a hard protective coating55US 5,846,613 A1998
- Process for synthesizing one-dimensional nanosubstances by electron cyclotron resonance chemical vapor deposition15US 6,346,303 B12002
- Laminating product including adhesion layer and laminate product including protective film13US 7,279,239 B2Kabushiki Kaisha Toyota Chuo Kenkyusho · 2007