Method and system for forming a conformal silicon carbon nitride layer and structure formed using same

A method of forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate, the method comprising:

• providing the substrate comprising the gap within a reaction chamber;
• providing at least one of a nitrogen reactant and a noble gas to the reaction chamber;
• providing a silicon precursor to the reaction chamber;
• during an overlap period of the steps of providing at least one of a nitrogen reactant and a noble gas and providing the silicon precursor, providing plasma power for a deposition period to thereby form conformal silicon carbon nitride material within the gap;
• using a plasma process for a treatment period, treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material;
• and
• repeating the steps of providing plasma power for a deposition period and treating the conformal silicon carbon nitride material to form the conformal silicon carbon nitride layer,
• wherein a temperature within the reaction chamber is less than 400° C.,
• wherein the silicon precursor is represented by the general formulas:
• where each R1-R8 is independently selected from groups represented by CxNyHz, where x ranges from 0 to about 3, where y ranges from 0 to about 2, and where z ranges from about 3 to about 9;
• or
• where each R1-R6 is independently selected from groups represented by CxNyHz, where x ranges from 0 to about 3, where y ranges from 0 to about 2, and where z ranges from about 3 to about 9;
• or
• where each R1-R4 is independently selected from groups represented by CxNyHz, where x ranges from 0 to about 3, where y ranges from 0 to about 2, and where z ranges from about 3 to about 9,
• wherein A1-A3 are independently selected from groups comprising at least one of C and H, and
• wherein Z1 and Z2 comprise C and H.