C23C 16/345
Silicon nitride
Official title: {Silicon nitride}
C23C16/345 (Silicon nitride) appears on 1,490 US grants and 2,051 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,490
- Published applications
- 2,051
- Assignees
- 437
- Inventors
- 3,265
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 5 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 9 | 0 |
| 1994 | 8 | 0 |
| 1995 | 6 | 0 |
| 1996 | 8 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 13 | 0 |
| 2000 | 23 | 0 |
| 2001 | 17 | 5 |
| 2002 | 23 | 31 |
| 2003 | 27 | 35 |
| 2004 | 24 | 33 |
| 2005 | 25 | 57 |
| 2006 | 16 | 71 |
| 2007 | 29 | 36 |
| 2008 | 17 | 54 |
| 2009 | 26 | 64 |
| 2010 | 38 | 58 |
| 2011 | 41 | 53 |
| 2012 | 54 | 67 |
| 2013 | 43 | 53 |
| 2014 | 42 | 59 |
| 2015 | 45 | 84 |
| 2016 | 60 | 90 |
| 2017 | 64 | 92 |
| 2018 | 78 | 111 |
| 2019 | 75 | 133 |
| 2020 | 97 | 138 |
| 2021 | 86 | 124 |
| 2022 | 84 | 138 |
| 2023 | 89 | 147 |
| 2024 | 96 | 107 |
| 2025 | 103 | 145 |
| 2026 | 66 | 66 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Substrate treatment method8 Sep 2026US 12,729,428 B2Jusung Engineering Co., Ltd.
- Semiconductor device and manufacturing method thereof8 Sep 2026US 12,729,432 B2AUO Corporation
- Method of manufacturing integrated circuit device1 Sep 2026US 12,727,406 B2Samsung Electronics Co., Ltd.
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Silicon precursor compound, composition for forming silicon-containing film including the same, and method of forming silicon-containing film17 Sep 2026US 2026/0274873 A1Up Chemical Co., Ltd.
- Electron spin containing materials and methods for producing said materials10 Sep 2026US 2026/0265062 A1Archer Materials Limited
- Methods for atomic layer deposition of sico(n) using halogenated silylamides3 Sep 2026US 2026/0258553 A1APPLIED Materials.Inc.
- System for providing a precursor mixture to a reaction chamber20 Aug 2026US 2026/0242935 A1ASM IP Holding B. V.
Most cited
By later US patents
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Plasma uniformity control by gas diffuser hole design746US 8,083,853 B2APPLIED Materials.Inc. · 2011
- Diffuser plate with slit valve compensation739US 8,328,939 B2APPLIED Materials.Inc. · 2012
- Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films716US 4,854,263 AAPPLIED Materials.Inc. · 1989