Substrate treatment method
AssigneeJusung Engineering Co., Ltd.
InventorsJae Wuk So, Chang Kyun Park, Hong Min Yoon, Joo Sung Kim, Chul Joo Hwang
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Abstract
The present inventive concept relates to a method for treatment of a substrate having an insulating layer and an electrode layer formed thereon, the method comprising: a plasma treatment step of treating the substrate with plasma by using treatment gas containing fluorine (F); a selective adsorption step of spraying the substrate, subjected to the plasma treatment step, with source gas containing a high-k material to adsorb the high-k material only on the electrode layer; and a selective deposition step of spraying the substrate, subjected to the selective adsorption step, with reaction gas to deposit a high-k layer only on the electrode layer.
Claims17
A method of processing a substrate where an insulation layer and an electrode layer are formed, the method comprising:
- a plasma treatment step of performing plasma treatment on the substrate by using a processing gas including fluorine (F);
- a selective adsorption step of injecting a source gas including a high-k dielectric material onto the substrate on which the plasma treatment step has been performed;
- and
- a selective deposition step of injecting a reactant gas onto the substrate, on which the selective adsorption step has been performed, to deposit a high-k dielectric layer onto only the electrode layer,
- wherein the plasma treatment step performs plasma treatment on the substrate, where the insulation layer manufactured by using silicon nitride (SiN) and the electrode layer manufactured by using titanium nitride (TiN) are formed, by using the processing gas including sulfur hexafluoride (SF6).
A method of processing a substrate where an insulation layer and an electrode layer are formed, the method comprising:
- a plasma treatment step of performing plasma treatment on the substrate by using a processing gas including fluorine (F);
- a selective adsorption step of injecting a source gas including a high-k dielectric material onto the substrate on which the plasma treatment step has been performed;
- and
- a selective deposition step of injecting a reactant gas onto the substrate, on which the selective adsorption step has been performed, to deposit a high-k dielectric layer onto only the electrode layer,
- wherein the plasma treatment step performs plasma treatment on the substrate by using the processing gas including sulfur hexafluoride (SF6) to form a blocking layer, blocking adsorption of the high-k dielectric material, on the insulation layer.
Dependencies are inferred from the claim text.