C23C 16/0227
By cleaning or etching
Official title: {by cleaning or etching}
C23C16/0227 (By cleaning or etching) appears on 1,018 US grants and 1,245 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,018
- Published applications
- 1,245
- Assignees
- 550
- Inventors
- 3,160
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 11 | 0 |
| 1993 | 9 | 0 |
| 1994 | 9 | 0 |
| 1995 | 14 | 0 |
| 1996 | 20 | 0 |
| 1997 | 24 | 0 |
| 1998 | 19 | 0 |
| 1999 | 22 | 0 |
| 2000 | 38 | 0 |
| 2001 | 24 | 13 |
| 2002 | 27 | 30 |
| 2003 | 27 | 29 |
| 2004 | 20 | 29 |
| 2005 | 24 | 25 |
| 2006 | 9 | 36 |
| 2007 | 17 | 24 |
| 2008 | 8 | 30 |
| 2009 | 17 | 16 |
| 2010 | 16 | 34 |
| 2011 | 22 | 20 |
| 2012 | 16 | 29 |
| 2013 | 17 | 23 |
| 2014 | 19 | 33 |
| 2015 | 23 | 44 |
| 2016 | 21 | 44 |
| 2017 | 36 | 59 |
| 2018 | 34 | 66 |
| 2019 | 49 | 76 |
| 2020 | 54 | 78 |
| 2021 | 50 | 81 |
| 2022 | 60 | 104 |
| 2023 | 51 | 98 |
| 2024 | 75 | 95 |
| 2025 | 69 | 76 |
| 2026 | 43 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Substrate processing apparatus and substrate processing method6 Oct 2026US 12,753,501 B2Tokyo Electron Limited
- Embedding method and processing system29 Sep 2026US 12,751,259 B2Tokyo Electron Limited
- Dram devices having molybdenum sulfide channel1 Sep 2026US 12,723,307 B2APPLIED Materials.Inc.
- Selective deposition25 Aug 2026US 12,716,126 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Integration of vapor deposition process into plasma etch reactor8 Oct 2026US 2026/0311972 A1Lam Research Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Plasma pretreatment for selective adsorption of aminosilane inhibitor24 Sep 2026US 2026/0293545 A1Lam Research Corporation
- Deposition system with integrated carrier cleaning modules17 Sep 2026US 2026/0275502 A1Veeco Instruments Inc.
- Ruthenium seeding for corrosion free molybdenum growth17 Sep 2026US 2026/0282856 A1APPLIED Materials.Inc.
Most cited
By later US patents
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Hybrid layers for use in coatings on electronic devices or other articles585US 7,968,146 B2The Trustees of Princeton University · 2011
- UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition574US 6,284,050 B1Novellus Systems, Inc. · 2001
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- CVD reactor apparatus568US 5,574,247 AHitachi, Ltd. · 1996