C23C 16/0236
By etching with a reactive gas
Official title: {by etching with a reactive gas}
C23C16/0236 (By etching with a reactive gas) appears on 178 US grants and 223 published applications in this corpus.
Search patents in C23C- Granted patents
- 178
- Published applications
- 223
- Assignees
- 112
- Inventors
- 616
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 6 | 3 |
| 2002 | 6 | 5 |
| 2003 | 5 | 8 |
| 2004 | 5 | 11 |
| 2005 | 7 | 6 |
| 2006 | 2 | 4 |
| 2007 | 6 | 4 |
| 2008 | 1 | 3 |
| 2009 | 3 | 3 |
| 2010 | 3 | 5 |
| 2011 | 4 | 4 |
| 2012 | 1 | 7 |
| 2013 | 3 | 3 |
| 2014 | 1 | 5 |
| 2015 | 2 | 7 |
| 2016 | 3 | 6 |
| 2017 | 5 | 6 |
| 2018 | 5 | 11 |
| 2019 | 6 | 11 |
| 2020 | 13 | 15 |
| 2021 | 6 | 13 |
| 2022 | 8 | 21 |
| 2023 | 8 | 17 |
| 2024 | 12 | 16 |
| 2025 | 17 | 20 |
| 2026 | 7 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing apparatus and substrate processing method6 Oct 2026US 12,753,501 B2Tokyo Electron Limited
- Selective deposition25 Aug 2026US 12,716,126 B2ASM IP Holding B. V.
- Electrode and method for production30 Jun 2026US 12,668,871 B2Condias GmbH
- Formation of pores in atomically thin layers16 Jun 2026US 12,655,026 B2King Fahd University of Petroleum and Minerals
- Surface processing method and processing system16 Jun 2026US 12,660,541 B2Tokyo Electron Limited
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium16 Jul 2026US 2026/0206504 A1Kokusai Electric Corporation
- Method of depositing molybdenum-containing material on a surface18 Jun 2026US 2026/0168084 A1ASM IP Holding B. V.
- Circular beam telecommunications wavelength edge-emitting semiconductor laser28 May 2026US 2026/0149239 A1University of Notre Dame du Lac
- Transition metal dichalcogenide having a heterostructure, method for manufacturing the same, and photoelectric device including the same21 May 2026US 2026/0139368 A1UIF (University Industry Foundation), Yonsei University
- Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium2 Apr 2026US 2026/0096366 A1Kokusai Electric Corporation
Most cited
By later US patents
- Processing apparatus with means for rotating an object mounting means and a disk body located in the mounting means differently relative to each other425US 5,520,743 ATokyo Electron Limited · 1996
- Apparatus for forming a thin film on surface of semiconductor substrate417US 5,174,881 AMitsubishi Denki Kabushiki Kaisha · 1992
- Method of forming a thin film on surface of semiconductor substrate369US 5,407,867 AMitsubishki Denki Kabushiki Kaisha · 1995
- Epitaxial deposition process and apparatus241US 7,494,545 B2APPLIED Materials.Inc. · 2009
- Apparatus for surface conditioning237US 5,580,421 AFSI International, Inc. · 1996