Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsRyuji Yamamoto, Takayuki Yamamoto, Kaigo Tahara, Hideki Horita
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Abstract
There is provided a technique that includes: (a) preparing a substrate including a nitrogen-containing film, which is formed to be thicker by a thickness T2 than a target thickness T1, and an oxide film on a surface of the substrate; and (b) etching the oxide film on the surface of the substrate using a substance X generated by supplying a fluorine-containing substance to the substrate and chemically reacting the nitrogen-containing film with the fluorine-containing substance.
Claims23
A processing method comprising:
- (a) preparing a substrate including a nitrogen-containing film, which is formed to be thicker by a thickness T2 than a target thickness T1, and an oxide film on a surface of the substrate;
- and
- (b) etching the oxide film on the surface of the substrate using a substance X generated by supplying a fluorine-containing substance to the substrate and chemically reacting the nitrogen-containing film with the fluorine-containing substance.
A processing apparatus comprising:
- a device configured to prepare a substrate;
- a fluorine-containing substance supply system that supplies a fluorine-containing substance to the substrate;
- and
- a controller configured to be capable of controlling the device and the fluorine-containing substance supply system to perform a process including:
- (a) preparing the substrate including a nitrogen-containing film, which is formed to be thicker by a thickness T2 than a target thickness T1, and an oxide film on a surface of the substrate;
- and
- (b) etching the oxide film on the surface of the substrate using a substance X generated by supplying the fluorine-containing substance to the substrate and chemically reacting the nitrogen-containing film with the fluorine-containing substance.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a processing apparatus to perform a process comprising:
- (a) preparing a substrate including a nitrogen-containing film, which is formed to be thicker by a thickness T2 than a target thickness T1, and an oxide film on a surface of the substrate;
- and
- (b) etching the oxide film on the surface of the substrate using a substance X generated by supplying a fluorine-containing substance to the substrate and chemically reacting the nitrogen-containing film with the fluorine-containing substance.
Dependencies are inferred from the claim text.