Surface processing method and processing system
AssigneeTokyo Electron Limited
InventorsKoichi Takatsuki, Tadahiro Ishizaka, Mikio Suzuki, Toshio Hasegawa
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Abstract
There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.
Claims11
A method of performing a surface processing on a substrate having a tungsten layer formed on a bottom portion of a recess formed in an insulating film, wherein a surface of the insulating film is directly exposed to a side surface of the recess, the method comprising:
- supplying a chlorine-containing gas into a processing chamber in which the substrate is loaded so as to supply the chlorine-containing gas to the recess;
- and
- removing a tungsten oxide film from the bottom portion of the recess using the chlorine-containing gas at an etching rate higher than an etching rate of the insulating film which is exposed to the recess, thereby maintaining a shape of the recess,
- wherein the chlorine-containing gas is at least one of tungsten chloride, thionyl chloride, and chlorine fluoride,
- wherein the removing the tungsten oxide film is performed using a chemical etching method in which no plasma is used, and
- wherein the tungsten oxide film is removed by being directly exposed to the chlorine-containing gas and chemically reacting with the chlorine-containing gas.
Dependencies are inferred from the claim text.