Method of forming a thin film on surface of semiconductor substrate

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface, comprising the sequential steps of:

• providing a first chamber for removing said naturally grown oxide film and other contaminants, a second chamber for forming said thin film, and a third chamber in which a gas atmosphere is controlled and provided between said first chamber and said second chamber,
• placing said semiconductor substrate in said first chamber;
• introducing into said first chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants;
• removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light and heating said semiconductor substrate at a temperature within the range of 200.degree.-700.degree. C. in said first chamber;
• moving said semiconductor substrate from said first chamber to said third chamber,
• controlling the gas atmosphere in said third chamber such that said naturally grown oxide is not formed again on the semiconductor substrate,
• moving said semiconductor substrate from said third chamber to said second chamber;
• and
• forming the thin film on said cleaned surface of said semiconductor substrate in said second chamber.

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface by sputtering, comprising the sequential steps of:

• providing a chamber having a light source for irradiating a light into the chamber and a sputtering target placed in the chamber for providing components of the thin film;
• placing said semiconductor substrate in said chamber such that the semiconductor substrate is opposite said light source;
• introducing into said chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants;
• removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light of said light source and heating said semiconductor substrate at a temperature within the range of 200.degree.-700.degree. C.;
• moving said semiconductor substrate such that the semiconductor substrate is generally opposite said sputtering target;
• and
• forming the thin film on the cleaned surface of said semiconductor substrate by sputtering said target.