C23C 16/02
Pretreatment of the material to be coated
Official title: Pretreatment of the material to be coated (C23C16/04 takes precedence)
C23C16/02 (Pretreatment of the material to be coated) appears on 3,231 US grants and 3,924 published applications in this corpus.
Search patents in C23C- Granted patents
- 3,231
- Published applications
- 3,924
- Assignees
- 1,324
- Inventors
- 8,175
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 11 | 0 |
| 1987 | 14 | 0 |
| 1988 | 13 | 0 |
| 1989 | 14 | 0 |
| 1990 | 15 | 0 |
| 1991 | 10 | 0 |
| 1992 | 19 | 0 |
| 1993 | 26 | 0 |
| 1994 | 34 | 0 |
| 1995 | 41 | 0 |
| 1996 | 46 | 0 |
| 1997 | 54 | 0 |
| 1998 | 62 | 0 |
| 1999 | 59 | 0 |
| 2000 | 87 | 0 |
| 2001 | 87 | 32 |
| 2002 | 84 | 100 |
| 2003 | 89 | 94 |
| 2004 | 72 | 94 |
| 2005 | 59 | 109 |
| 2006 | 46 | 116 |
| 2007 | 66 | 92 |
| 2008 | 50 | 110 |
| 2009 | 54 | 90 |
| 2010 | 85 | 138 |
| 2011 | 82 | 94 |
| 2012 | 68 | 120 |
| 2013 | 93 | 115 |
| 2014 | 85 | 118 |
| 2015 | 86 | 158 |
| 2016 | 91 | 145 |
| 2017 | 122 | 185 |
| 2018 | 119 | 175 |
| 2019 | 137 | 202 |
| 2020 | 157 | 206 |
| 2021 | 148 | 236 |
| 2022 | 156 | 288 |
| 2023 | 166 | 283 |
| 2024 | 185 | 240 |
| 2025 | 212 | 250 |
| 2026 | 110 | 134 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming silicon carbide conversion coat on carbon using gas phase reactions6 Oct 2026US 12,753,492 B2Goodrich Corporation
- Substrate processing apparatus and substrate processing method6 Oct 2026US 12,753,501 B2Tokyo Electron Limited
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Embedding method and processing system29 Sep 2026US 12,751,259 B2Tokyo Electron Limited
- Method for manufacturing crystalline gallium nitride thin film15 Sep 2026US 12,740,344 B2Kojundo Chemical Laboratory Co., Ltd.
- Integration of vapor deposition process into plasma etch reactor8 Oct 2026US 2026/0311972 A1Lam Research Corporation
- Film formation method and film formation apparatus1 Oct 2026US 2026/0297728 A1Tokyo Electron Limited
- Method of forming a structure using selective deposition on a metal surface1 Oct 2026US 2026/0297729 A1ASM IP Holding B. V.
- Optical device fabrication1 Oct 2026US 2026/0299366 A1View Operating Corporation
- Substrate processing method and method of manufacturing semiconductor device using the same24 Sep 2026US 2026/0293542 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method and apparatus for reducing particle contamination on wafer backside during CVD process611US 6,413,321 B1APPLIED Materials.Inc. · 2002
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004