C23C 16/0209
By heating
Official title: {by heating}
C23C16/0209 (By heating) appears on 447 US grants and 518 published applications in this corpus.
Search patents in C23C- Granted patents
- 447
- Published applications
- 518
- Assignees
- 277
- Inventors
- 1,359
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 5 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 9 | 0 |
| 1998 | 13 | 0 |
| 1999 | 6 | 0 |
| 2000 | 11 | 0 |
| 2001 | 17 | 5 |
| 2002 | 17 | 16 |
| 2003 | 17 | 15 |
| 2004 | 10 | 21 |
| 2005 | 9 | 9 |
| 2006 | 10 | 15 |
| 2007 | 4 | 8 |
| 2008 | 8 | 11 |
| 2009 | 7 | 8 |
| 2010 | 6 | 16 |
| 2011 | 10 | 7 |
| 2012 | 4 | 14 |
| 2013 | 8 | 14 |
| 2014 | 9 | 16 |
| 2015 | 8 | 33 |
| 2016 | 26 | 33 |
| 2017 | 16 | 23 |
| 2018 | 18 | 22 |
| 2019 | 27 | 29 |
| 2020 | 9 | 36 |
| 2021 | 15 | 33 |
| 2022 | 22 | 33 |
| 2023 | 26 | 39 |
| 2024 | 27 | 28 |
| 2025 | 30 | 22 |
| 2026 | 8 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of operation of semiconductor processing tool15 Sep 2026US 12,740,374 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic device including s-shaped staggered contacts8 Sep 2026US 12,729,429 B2APPLIED Materials.Inc.
- Selective cobalt deposition on copper surfaces14 Jul 2026US 12,680,158 B2APPLIED Materials.Inc.
- Substrate processing apparatus and method of manufacturing semiconductor device using the same16 Jun 2026US 12,660,518 B2Samsung Electronics Co., Ltd.
- Methods of formation of a SiGe/Si superlattice9 Jun 2026US 12,652,840 B2APPLIED Materials.Inc.
- Substrate processing method and method of manufacturing semiconductor device using the same24 Sep 2026US 2026/0293542 A1Samsung Electronics Co., Ltd.
- Substrate clamping and soaking sequences6 Aug 2026US 2026/0226622 A1Lam Research Corporation
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- Methods for depositing a layer including group iii and group v elements on a silicon substrate30 Jul 2026US 2026/0223608 A1Aixtron SE
- Methods of formation of a sige/si superlattice16 Jul 2026US 2026/0206272 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method and apparatus for reducing particle contamination on wafer backside during CVD process611US 6,413,321 B1APPLIED Materials.Inc. · 2002
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Pretreatment processes within a batch ALD reactor566US 7,402,534 B2APPLIED Materials.Inc. · 2008
- Post-deposition treatment to enhance properties of Si-O-C low k films526US 7,326,657 B2APPLIED Materials.Inc. · 2008
- Post-deposition treatment to enhance properties of Si-O-C low K films526US 8,143,174 B2APPLIED Materials.Inc. · 2012